SiA432DJ
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
28
25
20
21
15
14
Package Limited
10
7
5
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T C - Case Temperature (°C)
Current Derating*, Junction-to-Case
T J - Temperature (°C)
Power Derating
* The power dissipation P D is based on T J (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0179-Rev. C, 10-Feb-14
5
Document Number: 68697
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SIA443DJ-T1-GE3 MOSFET P-CH 20V 9A SC70-6
SIA448DJ-T1-GE3 MOSFET N-CH 20V D-S SC70-6L
SIA461DJ-T1-GE3 MOSFET P-CH 20V 12A SC706L
SIA511DJ-T1-GE3 MOSFET N/P-CH 12V PWRPAK SC70-6
SIA513DJ-T1-GE3 MOSFET N/P-CH 20V PWRPAK SC70-6
SIA533EDJ-T1-GE3 MOSFET N/P-CH 12V 4.5A SC70-6
SIA777EDJ-T1-GE3 MOSFET N/P-CH 20V PPAK SC70-6L
SIA811DJ-T1-GE3 MOSFET P-CH 20V 4.5A SC70-6
相关代理商/技术参数
SIA433EDJ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
SIA433EDJ-T1-GE3 功能描述:MOSFET -20V 18mOhm@4.5V 12A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA436DJ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 8 V (D-S) MOSFET
SIA436DJ-T1-GE3 功能描述:MOSFET 8V 12A 19W 9.4mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA437DJ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET
SIA437DJ-T1-GE3 功能描述:MOSFET 20V 14.5mOhm@4.5V 16A P-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA438EDJ-T1-GE3 功能描述:MOSFET 20V 6.0A 11.4W 46mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SiA439EDJ-T1-GE3 功能描述:MOSFET -20V .0165Ohm@4.5V 28A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube